Slip systems and misfit dislocations in InGaN epilayers
Identifieur interne : 00BD14 ( Main/Repository ); précédent : 00BD13; suivant : 00BD15Slip systems and misfit dislocations in InGaN epilayers
Auteurs : RBID : Pascal:04-0034429Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We have studied the microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgrown GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislocations, slip occurs with the formation of periodic arrays of misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces. This letter presents a comprehensive analysis of slip systems in the wurtzite structure and considers the role of threading dislocations in strain relaxation in InGaN alloys. © 2003 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00C198
Links to Exploration step
Pascal:04-0034429Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Slip systems and misfit dislocations in InGaN epilayers</title><author><name sortKey="Srinivasan, S" uniqKey="Srinivasan S">S. Srinivasan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Geng, L" uniqKey="Geng L">L. Geng</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Liu, R" uniqKey="Liu R">R. Liu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Ponce, F A" uniqKey="Ponce F">F. A. Ponce</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Arizona</region></placeName><wicri:cityArea>Department of Physics and Astronomy, Arizona State University, Tempe</wicri:cityArea></affiliation></author><author><name sortKey="Narukawa, Y" uniqKey="Narukawa Y">Y. Narukawa</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>491 Oka, Kaminaka-Cho, Anan-Shi, Tokushima 774-8601, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>491 Oka, Kaminaka-Cho, Anan-Shi, Tokushima 774-8601</wicri:regionArea><wicri:noRegion>Tokushima 774-8601</wicri:noRegion></affiliation></author><author><name sortKey="Tanaka, S" uniqKey="Tanaka S">S. Tanaka</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>491 Oka, Kaminaka-Cho, Anan-Shi, Tokushima 774-8601, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>491 Oka, Kaminaka-Cho, Anan-Shi, Tokushima 774-8601</wicri:regionArea><wicri:noRegion>Tokushima 774-8601</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0034429</idno><date when="2003-12-22">2003-12-22</date><idno type="stanalyst">PASCAL 04-0034429 AIP</idno><idno type="RBID">Pascal:04-0034429</idno><idno type="wicri:Area/Main/Corpus">00C198</idno><idno type="wicri:Area/Main/Repository">00BD14</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dislocation density</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor epitaxial layers</term><term>Slip</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6172H</term><term>6855L</term><term>6172F</term><term>6172L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Glissement</term><term>Couche épitaxique semiconductrice</term><term>Densité dislocation</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have studied the microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgrown GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislocations, slip occurs with the formation of periodic arrays of misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces. This letter presents a comprehensive analysis of slip systems in the wurtzite structure and considers the role of threading dislocations in strain relaxation in InGaN alloys. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>25</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Slip systems and misfit dislocations in InGaN epilayers</s1></fA08><fA11 i1="01" i2="1"><s1>SRINIVASAN (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>GENG (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIU (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>PONCE (F. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>NARUKAWA (Y.)</s1></fA11><fA11 i1="06" i2="1"><s1>TANAKA (S.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>491 Oka, Kaminaka-Cho, Anan-Shi, Tokushima 774-8601, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>5187-5189</s1></fA20><fA21><s1>2003-12-22</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0034429</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have studied the microstructure of InGaN layers grown on two different GaN substrates: a standard GaN film on sapphire and an epitaxial lateral overgrown GaN (ELOG) structure. These two materials exhibit two distinct mechanisms of strain relaxation. InGaN epilayers on GaN are typically pseudomorphic and undergo elastic relaxation by the opening of threading dislocations into pyramidal pits. A different behavior occurs in the case of epitaxy on ELOG where, in the absence of threading dislocations, slip occurs with the formation of periodic arrays of misfit dislocations. Potential slip systems responsible for this behavior have been analyzed using the Matthews-Blakeslee model and taking into account the Peierls forces. This letter presents a comprehensive analysis of slip systems in the wurtzite structure and considers the role of threading dislocations in strain relaxation in InGaN alloys. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60A72H</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55L</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A72F</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A72L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6172H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6172F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6172L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Glissement</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Slip</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Densité dislocation</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Dislocation density</s0></fC03><fN21><s1>019</s1></fN21><fN47 i1="01" i2="1"><s0>0451M000037</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00BD14 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00BD14 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:04-0034429
|texte= Slip systems and misfit dislocations in InGaN epilayers
}}
| This area was generated with Dilib version V0.5.77. |  |